Impact of local structure on halogen ion migration in layered methylammonium copper halide memory devices

Author:

Ray Aniruddha12345,Martín-García Beatriz62347ORCID,Martinelli Alberto894ORCID,Spirito Davide101112ORCID,Locardi Federico51314415ORCID,Altamura Davide1617184ORCID,Giannini Cinzia1617184ORCID,Prato Mirko19234ORCID,Manna Liberato1234ORCID,Abdelhady Ahmed L.1234ORCID

Affiliation:

1. Nanochemistry Department

2. Istituto Italiano di Tecnologia

3. 16163 Genova

4. Italy

5. Dipartimento di Chimica e Chimica Industriale

6. Graphene Labs

7. CIC nanoGUNE

8. SPIN-CNR

9. I-16152 Genova

10. IHP—Leibniz-Institut für Innovative Mikroelektronik

11. D-15236 Frankfurt (Oder)

12. Germany

13. Università degli Studi di Genova

14. Genova

15. Physics and Chemistry of Nanostructures (PCN)

16. Istituto di Cristallografia

17. Consiglio Nazionale delle Ricerche

18. 70126 Bari

19. Materials Characterization Facility

Abstract

Refined structural studies shine light on the factors favouring ion migration in layered methylammonium copper halide materials and their memory devices.

Funder

Horizon 2020

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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