3C-SiC carbonization optimization and void reduction on misoriented Si substrates: from a research reactor to a production scale reactor
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/CE/C6CE01388K
Reference26 articles.
1. S. E. Saddow and A.Agarwal, Advances in Silicon Carbide Processing and Applications, Artech House, 2004
2. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
3. SiC devices: physics and numerical simulation
4. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors
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