Atomic structure of light-induced efficiency-degrading defects in boron-doped Czochralski silicon solar cells-Reference-Cited by-同舟云学术

Atomic structure of light-induced efficiency-degrading defects in boron-doped Czochralski silicon solar cells

Published:2021 Issue:10 Volume:14 Page:5416-5422
ISSN:1754-5692
Container-title:Energy & Environmental Science
language:en
Short-container-title:Energy Environ. Sci.

Author:

Meyer Abigail R.¹²^ORCID,Taylor P. Craig³,Venuti Michael B.³^ORCID,Eley Serena³^ORCID,LaSalvia Vincenzo²^ORCID,Nemeth William²,Page Matthew R.²^ORCID,Young David L.²,Stradins Paul²^ORCID,Agarwal Sumit¹²^ORCID

Affiliation:

1. Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, CO, 80401, USA

2. National Renewable Energy Laboratory, Golden, CO, 80401, USA

3. Department of Physics, Colorado School of Mines, Golden, CO, 80401, USA

Abstract

Using electron paramagnetic resonance, we show that under light exposure, nearly all the 1016 boron doping sites in Si degrade to form shallow traps. Of these 1016 traps, only 1012–1013 cm−3 are spin-active and responsible for light-induced degradation.

Funder

U.S. Department of Energy

Publisher

Royal Society of Chemistry (RSC)

Subject

Pollution,Nuclear Energy and Engineering,Renewable Energy, Sustainability and the Environment,Environmental Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/EE/D1EE01788H

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