Switching endurance of the molecular spin crossover complex [Fe(HB(tz)<sub>3</sub>)<sub>2</sub>]: from single crystals to thin films and electronic devices-Reference-Cited by-同舟云学术

Switching endurance of the molecular spin crossover complex [Fe(HB(tz)₃)₂]: from single crystals to thin films and electronic devices

Published:2022 Issue:22 Volume:3 Page:8193-8200
ISSN:2633-5409
Container-title:Materials Advances
language:en
Short-container-title:Mater. Adv.

Author:

Zhang Yuteng¹²,Zhang Lijun¹,Ridier Karl¹^ORCID,Salmon Lionel¹^ORCID,Séguy Isabelle²^ORCID,Molnár Gábor¹^ORCID,Bousseksou Azzedine¹

Affiliation:

1. LCC, CNRS and Université de Toulouse, UPS, INP, F-31077, Toulouse, France

2. LAAS, CNRS and Université de Toulouse, INSA, UPS, F-31077, Toulouse, France

Abstract

The spin-state switching behavior of [Fe(HB(tz)3)2] remains virtually unaltered for more than 104 endurance cycles in ambient air in single crystals, thin films and metal–insulator–metal junctions, highlighting the scope for technological applications.

Funder

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Chemistry (miscellaneous)

Link

http://pubs.rsc.org/en/content/articlepdf/2022/MA/D2MA00802E

Reference44 articles.

1. Spin Transition Molecular Materials for displays and data recording

2. Spin-Transition Polymers: From Molecular Materials Toward Memory Devices

3. Thermal and Optical Switching of Iron(II) Complexes