First-principles prediction of Tl/SiC for valleytronics-Reference-Cited by-同舟云学术

First-principles prediction of Tl/SiC for valleytronics

Published:2017 Issue:39 Volume:5 Page:10427-10433
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Xu Zhen¹²³⁴⁵,Zhang Qingyun⁶⁷⁸⁹,Shen Qian¹²³⁴⁵^ORCID,Cheng Yingchun¹²³⁴⁵^ORCID,Schwingenschlögl Udo⁶⁷⁸⁹^ORCID,Huang Wei¹²³⁴⁵

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)

2. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)

3. Nanjing Tech University (NanjingTech)

4. Nanjing 211816

5. China

6. Physical Science and Engineering Division (PSE)

7. King Abdullah University of Science & Technology (KAUST)

8. Thuwal 23955-6900

9. Saudi Arabia

Abstract

We demonstrate by first-principles calculations that monolayer Tl can be grown on SiC. Our study shows that the Tl/SiC system is promising for valleytronic applications.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC03799F

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