Ionic charge distributions in silicon atomic surface wires

Author:

Croshaw Jeremiah12345ORCID,Huff Taleana6734,Rashidi Mohammad1234,Wood John1234,Lloyd Erika1234,Pitters Jason6734ORCID,Wolkow Robert A.12345

Affiliation:

1. Department of Physics

2. University of Alberta

3. Edmonton

4. Canada

5. Quantum Silicon Inc.

6. Nanotechnology Research Centre

7. National Research Council Canada

Abstract

Using a non-contact atomic force microscope (nc-AFM), we examine continuous dangling bond (DB) wire structures patterned on the hydrogen terminated silicon (100)-2 × 1 surface.

Funder

Natural Sciences and Engineering Research Council of Canada

Alberta Innovates - Technology Futures

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Reference90 articles.

1. Silicon quantum electronics

2. E. Prati and T.Shinada , in IEEE International Electron Devices Meeting (IEDM) , San Francisco , 2014 , pp. 1.2.1–1.2.4

3. A single-atom transistor

4. Spin readout and addressability of phosphorus-donor clusters in silicon

5. Single-electron devices in silicon

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