Coupling effect between hole storage and interfacial charge transfer over ultrathin CoPi-modified hematite photoanodes-Reference-Cited by-同舟云学术

Coupling effect between hole storage and interfacial charge transfer over ultrathin CoPi-modified hematite photoanodes

Published:2022 Issue:24 Volume:51 Page:9247-9255
ISSN:1477-9226
Container-title:Dalton Transactions
language:en
Short-container-title:Dalton Trans.

Author:

Wang Pengpeng¹²,Ding Chunmei¹²,Li Dongfeng¹²,Cao Yimeng¹,Li Zheng¹,Wang Xiuli¹²^ORCID,Shi Jingying¹²^ORCID,Li Can¹²^ORCID

Affiliation:

1. State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian National Laboratory for Clean Energy, Zhongshan Road 457, Dalian 116023, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

The decoration of CoPi over Fe2O3 can effectively suppress charge recombination via the release of Fermi level pinning; its coupling effect between hole storage and rapid charge transfer should be responsible for the photocurrent improvement.

Funder

National Key Research and Development Program of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Liaoning Revitalization Talents Program

Publisher

Royal Society of Chemistry (RSC)

Subject

Inorganic Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/DT/D2DT00765G

Reference47 articles.