A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency-Reference-Cited by-同舟云学术

A self-powered broadband photodetector based on an n-Si(111)/p-NiO heterojunction with high photosensitivity and enhanced external quantum efficiency

Published:2017 Issue:47 Volume:5 Page:12520-12528
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Yongfang¹²³⁴⁵,Ji Tao¹²³⁴⁵,Zhang Wenlong¹²³⁴⁵,Guan Guoqiang¹²³⁴⁵,Ren Qilong¹²³⁴⁵,Xu Kaibing⁶³⁴⁵,Huang Xiaojuan¹²³⁴⁵,Zou Rujia¹²³⁴⁵^ORCID,Hu Junqing¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory for Modification of Chemical Fibers and Polymer Materials

2. College of Materials Science and Engineering

3. Donghua University

4. Shanghai

5. China

6. Research Center for Analysis and Measurement

Abstract

A broadband photodetector based on n-Si(111)/p-NiO heterojunctions not only shows excellent photosensitivity and EQE, but also exhibits outstanding self-powered properties.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Ministry of Education of the People's Republic of China

Donghua University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC04565D

Reference66 articles.