Controlling thermoelectric transport via native defects in the diamond-like semiconductors Cu2HgGeTe4 and Hg2GeTe4-Reference-Cited by-同舟云学术

Controlling thermoelectric transport via native defects in the diamond-like semiconductors Cu2HgGeTe4 and Hg2GeTe4

Published:2021 Issue:46 Volume:9 Page:26189-26201
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Qu Jiaxing¹^ORCID,Porter Claire E.²,Gomes Lídia C.¹,Adamczyk Jesse M.²,Toriyama Michael Y.³,Ortiz Brenden R.⁴^ORCID,Toberer Eric S.²^ORCID,Ertekin Elif¹^ORCID

Affiliation:

1. University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA

2. Colorado School of Mines, Golden, CO 80401, USA

3. Northwestern University, Evanston, IL 60208, USA

4. University of California Santa Barbara, Santa Barbara, CA 93106, USA

Abstract

Defect analysis and phase boundary mapping of Cu2HgGeTe4 and Hg2GeTe4 reveal reciprocal doping potential despite their similar crystal structures. Measurements validate predictions of Cu2HgGeTe4 as highly degenerate and Hg2GeTe4 as an intrinsic semiconductor.

Funder

Division of Graduate Education

U.S. Department of Energy

Division of Materials Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TA/D1TA07410E

Reference45 articles.

1. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies