Recent advances in the fabrication of graphene–ZnO heterojunctions for optoelectronic device applications-Reference-Cited by-同舟云学术

Recent advances in the fabrication of graphene–ZnO heterojunctions for optoelectronic device applications

Published:2018 Issue:15 Volume:6 Page:3815-3833
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liang Feng-Xia¹²³⁴,Gao Yang⁵²⁶⁴,Xie Chao⁷²³⁴^ORCID,Tong Xiao-Wei⁷²³⁴,Li Zhong-Jun⁷²³⁴,Luo Lin-Bao⁷²³⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering and Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices

2. Hefei University of Technology

3. Hefei

4. China

5. Institute of Industry and Equipment Technology

6. Hefei 230009

7. School of Electronic Sciences and Applied Physics

Abstract

Recently, by taking advantage of the synergistic effects of both graphene and ZnO, various photoelectric devices that combine graphene and ZnO have exhibited excellent device performances and attracted increasing research interest.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Anhui Province

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC00172C

Reference178 articles.

1. Transition in the Optical Emission Polarization of ZnO Nanorods

2. Stable and highly sensitive gas sensors based on semiconducting oxide nanobelts

3. Nanostructures of zinc oxide

4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

5. Piezoelectric Field Effect Transistor and Nanoforce Sensor Based on a Single ZnO Nanowire

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