Computational prediction of a novel 1D InSeI nanochain with high stability and promising wide-bandgap properties-Reference-Cited by-同舟云学术

Computational prediction of a novel 1D InSeI nanochain with high stability and promising wide-bandgap properties

Published:2020 Issue:46 Volume:22 Page:27441-27449
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Jiang Shujuan¹²³⁴⁵^ORCID,Yin Huabing¹²³⁴⁵^ORCID,Zheng Guang-Ping⁶⁷⁸⁹¹⁰,Wang Bing¹²³⁴⁵,Guan Shan¹¹¹²¹³¹⁴¹⁰,Yao Bing-Jian¹⁵¹⁶¹⁷¹⁸¹⁹

Affiliation:

1. Institute for Computational Materials Science

2. School of Physics and Electronics

3. International Joint Research Laboratory of New Energy Materials and Devices of Henan Province

4. Henan University

5. Kaifeng 475004

6. Department of Mechanical Engineering

7. The Hong Kong Polytechnic University

8. Hung Hom

9. Kowloon

10. China

11. State Key Laboratory of Superlattices and Microstructures

12. Institute of Semiconductors

13. Chinese Academy of Sciences

14. Beijing 100083

15. College of Chemistry

16. Chemical Engineering and Materials Science

17. Collaborative Innovation Center of Functionalized Probes for Chemical Imaging in Universities of Shandong

18. Key Laboratory of Molecular and Nano Probes

19. Ministry of Education

Abstract

We predict a series of novel 1D InSeI nanochains with high stability and promising wide-bandgap properties, which exhibits potential applications in nanoelectronic and optoelectronic devices.

Funder

National Natural Science Foundation of China

National Basic Research Program of China

Natural Science Foundation of Henan Province

China Postdoctoral Science Foundation

Research Grants Council, University Grants Committee

Henan University

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP04922K

Reference84 articles.

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5. InTeI: a novel wide-bandgap 2D material with desirable stability and highly anisotropic carrier mobility

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