Anomalous semiconducting behavior on VO2 under high pressure-Reference-Cited by-同舟云学术

Anomalous semiconducting behavior on VO2 under high pressure

Published:2015 Issue:68 Volume:5 Page:54843-54847
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Zhang Xin¹²³⁴⁵,Zhang Junkai⁶⁷⁵,Ke Feng⁶⁷⁵,Li Guanghui¹²³⁴⁵,Ma Yanmei¹²³⁴⁵,Liu Xizhe¹²³⁴⁵,Liu Cailong¹²³⁴⁵,Han Yonghao¹²³⁴⁵,Ma Yanzhang⁸⁹¹⁰¹¹,Gao Chunxiao¹²³⁴⁵

Affiliation:

1. State Key Lab of Superhard Materials

2. Institute of Atomic and Molecular

3. Jilin University

4. Changchun 130012

5. China

6. Center for High Pressure Science and Technology Advanced Research

7. Shanghai 201203

8. Department of Mechanical Engineering

9. Texas Tech University

10. Lubbock

11. USA

Abstract

The phase transition around 10.4 GPa is evidenced as a semiconductor-to-semiconductor transformation, and the abrupt increase of activation energy at 10.4 GPa indicates the increasingly insulating behavior of VO₂ during the phase transition.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA07732J

Reference33 articles.

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