Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga<sub>2</sub>O<sub>3</sub>-Reference-Cited by-同舟云学术

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga₂O₃

Published:2023 Issue:23 Volume:15 Page:9964-9972
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Leblanc Chloe¹,Herath Mudiyanselage Dinusha²,Song Seunguk¹^ORCID,Zhang Huairuo³⁴^ORCID,Davydov Albert V.³,Fu Houqiang²,Jariwala Deep¹^ORCID

Affiliation:

1. Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA

2. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, AZ 85287, USA

3. Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA

4. Theiss Research, Inc., La Jolla, CA 92037, USA

Abstract

Vertical heterojunctions based on 3D wide band-gap semiconductor, β-phase Ga2O3 and 2D layered semiconductors are demonstrated. Effects of 2D semiconductor, contact metals and β-Ga2O3 crystalline orientation on junction performance are investigated.

Funder

National Institute of Standards and Technology

National Research Foundation of Korea

Air Force Office of Scientific Research

Energy Frontier Research Centers

National Nanotechnology Coordinating Office

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

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