Fe3GaTe2/MoSe2 ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices-Reference-Cited by-同舟云学术

Fe₃GaTe₂/MoSe₂ ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices

Published:2023 Issue:9 Volume:25 Page:1339-1346
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Yin Hongfei¹²,Zhang Pengzhen¹²,Jin Wen¹²,Di Boyuan¹²,Wu Hao¹²³,Zhang Gaojie¹²,Zhang Wenfeng¹²^ORCID,Chang Haixin¹²³^ORCID

Affiliation:

1. Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mold Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

2. Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, China

3. Wuhan National High Magnetic Field Center and Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Abstract

A 2D room-temperature, ferromagnetic crystal based 2D vdW Fe3GaTe2/MoSe2/Fe3GaTe2 ferromagnet/semiconductor 2D van der Waals heterojunction is realized with a magnetoresistance of 3.7% at room temperature and 37.7% at 2 K under 10 nA working current.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Science, Technology and Innovation Commission of Shenzhen Municipality

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D2CE01695H

Reference54 articles.