Development of optimum p-nc-Si window layers for nc-Si solar cells-Reference-Cited by-同舟云学术

Development of optimum p-nc-Si window layers for nc-Si solar cells

Published:2017 Issue:32 Volume:19 Page:21357-21363
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Mondal Praloy¹²³⁴⁵,Das Debajyoti¹²³⁴⁵^ORCID

Affiliation:

1. Nano-Science Group

2. Energy Research Unit

3. Indian Association for the Cultivation of Science

4. Jadavpur

5. India

Abstract

p-Type nc-Si (p-nc-Si) films have been optimized under low growth temperature (∼180 °C) and low power (∼30 W) parametric conditions in 13.56 MHz RF-PECVD.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP02788E

Reference46 articles.

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