Multi-factor-controlled ReRAM devices and their applications-Reference-Cited by-同舟云学术

Multi-factor-controlled ReRAM devices and their applications

Published:2022 Issue:23 Volume:10 Page:8895-8921
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sun Bai¹²^ORCID,Zhou Guangdong³^ORCID,Yu Tian⁴^ORCID,Chen Yuanzheng¹^ORCID,Yang Feng²,Zhao Yong¹²

Affiliation:

1. School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China

2. Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China

3. School of Artificial Intelligence, Southwest University, Chongqing 400715, China

4. College of Physics, Sichuan University, Chengdu 610065, China

Abstract

Extra-factors-controlled ReRAM devices are expected to be used in the manufacture of multistate memory and artificial intelligent sensors.

Funder

Sichuan Province Science and Technology Support Program

Fundamental Research Funds for the Central Universities

National Key Research and Development Program of China

Fujian Normal University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC06005H

Reference212 articles.

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