Dual-axis control of magnetic anisotropy in a single crystal Co<sub>2</sub>MnSi thin film through piezo-voltage-induced strain-Reference-Cited by-同舟云学术

Dual-axis control of magnetic anisotropy in a single crystal Co₂MnSi thin film through piezo-voltage-induced strain

Published:2022 Issue:16 Volume:4 Page:3323-3329
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Zhang Bao¹,Mao Siwei²³,Li Chunlong¹⁴,Hong Peizhen¹,Hou Jingwen¹,Zhao Jianhua²³,Huo Zongliang¹⁴⁵^ORCID

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences, 100029 Beijing, China

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100190, China

4. College of Microelectronics, University of Chinese Academy of Sciences, 100049 Beijing, China

5. Yangtze Memory Technologies Co., Ltd (YMTC), 430205 Wuhan, China

Abstract

Dual-axis controlled magnetic anisotropy and magnetization 90° rotation are demonstrated in Co2MnSi/GaAs/PZT heterostructures under piezostrain. The periodic response of magnetization is achieved under the pulsed piezo-voltages of ±40 V.

Funder

Chinese Academy of Sciences

National Natural Science Foundation of China

National Key Research and Development Program of China

National Science and Technology Program during the Twelfth Five-year Plan Period

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NA/D1NA00864A

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