TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility-Reference-Cited by-同舟云学术

TlP5: an unexplored direct band gap 2D semiconductor with ultra-high carrier mobility

Published:2019 Issue:3 Volume:7 Page:639-644
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yuan Jun-Hui¹²³⁴⁵,Cresti Alessandro⁶⁷⁸⁹¹⁰^ORCID,Xue Kan-Hao¹²³⁴⁵^ORCID,Song Ya-Qian¹²³⁴⁵,Su Hai-Lei¹²³⁴⁵,Li Li-Heng¹²³⁴⁵,Miao Nai-Hua¹¹¹²¹³⁵,Sun Zhi-Mei¹¹¹²¹³⁵^ORCID,Wang Jia-Fu¹⁴¹⁵¹⁶⁵,Miao Xiang-Shui¹²³⁴⁵^ORCID

Affiliation:

1. Wuhan National Research Center for Optoelectronics

2. School of Optical and Electronic Information

3. Huazhong University of Science and Technology

4. Wuhan 430074

5. China

6. Univ. Grenoble Alpes

7. Univ. Savoie Mont Blanc

8. CNRS

9. Grenoble INP

10. IMEP-LAHC

11. School of Materials Science and Engineering

12. Beihang University

13. Beijing 100191

14. School of Science

15. Wuhan University of Technology

16. Wuhan 430070

Abstract

Monolayer TlP₅is predicted to be a direct gap semiconductor with a moderate band gap value of 2.02 eV and balanced high carrier mobilities for both electrons and holes.

Funder

National Natural Science Foundation of China

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC05164J

Reference43 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Two-dimensional gas of massless Dirac fermions in graphene