Manifestation of intrinsic defects in the band structures of quaternary chalcogenide Ag2In2SiSe6 and Ag2In2GeSe6 crystals
Author:
Affiliation:
1. Institute of Physics
2. Jan Dlugosz University
3. 42-200 Czestochowa, Poland
4. Faculty of Electrical Engineering
5. Czestochowa University of Technology
6. Physical Faculty
7. Eastern European University
8. Lutsk, Ukraine
Abstract
Complex studies on the band structures of novel Ag2In2SiSe6 and Ag2In2GeSe6 crystals were performed.
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE01005A
Reference52 articles.
1. Structural properties and quasiparticle band structures of Cu-based quaternary semiconductors for photovoltaic applications
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3. Crystal structure of Ag2In2GeSe6
4. X-ray powder diffraction refinement of Ag2In2SiSe6 structure and phase diagram of the AgInSe2–SiSe2 system
5. The Ag2S–In2S3–Si(Ge)S2 systems and crystal structure of quaternary sulfides Ag2In2Si(Ge)S6
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