Conduction control at ferroic domain walls via external stimuli-Reference-Cited by-同舟云学术

Conduction control at ferroic domain walls via external stimuli

Published:2014 Issue:18 Volume:6 Page:10524-10529
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yang J. C.¹²³,Yeh C. H.⁴⁵³,Chen Y. T.⁶⁷⁸,Liao S. C.¹⁵³,Huang R.⁹¹⁰¹¹¹²,Liu H. J.¹²³⁶⁷,Hung C. C.¹³¹⁴,Chen S. H.¹³¹⁴,Wu S. L.⁴⁵³,Lai C. H.¹⁵³,Chiu Y. P.⁶⁷⁸,Chiu P. W.⁴⁵³,Chu Y. H.¹²³

Affiliation:

1. Department of Materials Science and Engineering

2. National Chiao Tung University

3. Hsinchu, Taiwan

4. Institute of Electronics Engineering

5. National Tsing Hua University

6. Department of Physics

7. National Sun Yat-sen University

8. Kaohsiung 80424, Taiwan

9. Key Laboratory of Polar Materials and Devices

10. Ministry of Education

11. East China Normal University

12. Shanghai 200062, China

13. ThinTech Materials Technology Co., Ltd.

14. Kaohsiung, Taiwan

Abstract

Multiple conduction controls of ferroic domain walls via external stimuli are demonstrated for new nanoelectronics. The conduction level of 90° domain walls in multiferroic BiFeO₃ can be elegantly tuned by electric, magnetic fields and light, enabling such nano-sized homointerface to be promising candidates for new multifunctional devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR03300K

Reference27 articles.

1. Oxide Interfaces—An Opportunity for Electronics

2. Composite domain walls in a multiferroic perovskite ferrite

3. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

4. Local Conduction at the BiFeO3-CoFe2O4 Tubular Oxide Interface

5. Superconducting Interfaces Between Insulating Oxides

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