Sensor behavior of MoS2 field-effect transistor with light injection toward chemical recognition-Reference-Cited by-同舟云学术

Sensor behavior of MoS2 field-effect transistor with light injection toward chemical recognition

Published:2021 Issue:43 Volume:11 Page:26509-26515
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Alam Md Iftekharul¹²³⁴⁵,Takaoka Tsuyoshi⁶³⁷⁵,Waizumi Hiroki¹²³⁴⁵,Tanaka Yudai¹²³⁴⁵,Al Mamun Muhammad Shamim¹²³⁴⁵,Ando Atsushi⁸⁹¹⁰⁵,Komeda Tadahiro⁶³⁷⁵^ORCID

Affiliation:

1. Department of Chemistry

2. Graduate School of Science

3. Tohoku University

4. Sendai 980-8578

5. Japan

6. Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen)

7. Sendai 980-0877

8. Device Technology Research Institute

9. National Institute of Advanced Industrial Science and Technology (AIST)

10. Tsukuba

Abstract

The application of field-effect transistor (FET) devices with atomically thin channels as sensors has attracted significant attention. We further explore the method to attach the chemical recognition capability by combining with light injection.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/RA/D1RA03698J

Reference33 articles.

1. Nanotube Molecular Wires as Chemical Sensors

2. Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field

3. MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors