Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers-Reference-Cited by-同舟云学术

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Oxide removal and stabilization of bismuth thin films through chemically bound thiol layers

Published:2018 Issue:58 Volume:8 Page:33368-33373
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Alessio Verni Giuseppe¹²³⁴⁵^ORCID,Long Brenda¹²³⁴⁵^ORCID,Gity Farzan⁵²³⁴^ORCID,Lanius Martin⁶⁷⁸⁹,Schüffelgen Peter⁶⁷⁸⁹,Mussler Gregor⁶⁷⁸⁹,Grützmacher Detlev⁶⁷⁸⁹,Greer Jim⁵²³⁴¹⁰^ORCID,Holmes Justin D.¹²³⁴⁵

Affiliation:

1. School of Chemistry

2. University College Cork

3. Cork

4. Ireland

5. Tyndall National Institute

6. Peter Grünberg Institute 9

7. Jülich Aachen Research Alliance (JARA-FIT)

8. Research Center Jülich

9. Germany

10. Faculty of Science and Engineering

Abstract

Functionalisation of bismuth thin films with alkane thiols for oxide removal and passivation.

Funder

Irish Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA06840B

Reference48 articles.

1. Electronic structure of a bismuth bilayer

2. The surfaces of bismuth: Structural and electronic properties

3. Theoretical modeling of thermoelectricity in Bi nanowires

4. Theoretical investigation of thermoelectric transport properties of cylindrical Bi nanowires

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