Analysis of defect luminescence in Ga-doped ZnO nanoparticles-Reference-Cited by-同舟云学术

Analysis of defect luminescence in Ga-doped ZnO nanoparticles

Published:2016 Issue:14 Volume:18 Page:9586-9593
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Zhu Wenliang¹²³⁴⁵,Kitamura Shoichiro⁵⁶⁷⁴,Boffelli Marco⁵⁶⁷⁴,Marin Elia⁵⁶⁷⁴,Gaspera Enrico Della⁸⁹¹⁰¹¹,Sturaro Marco¹²¹³¹⁴¹⁵,Martucci Alessandro¹²¹³¹⁴¹⁵,Pezzotti Giuseppe⁵⁶⁷⁴

Affiliation:

1. Department of Medical Engineering for Treatment of Bone and Joint Disorders

2. Osaka University

3. Suita

4. Japan

5. Ceramic Physics Laboratory

6. Kyoto Institute of Technology

7. Sakyo-ku

8. School of Science

9. RMIT University

10. Melbourne VIC 3001

11. Australia

12. Dipartimento di Ingegneria Industriale

13. Università di Padova

14. 35131 Padova

15. Italy

Abstract

Cathodoluminescence analysis in Ga-doped ZnO nanoparticles showed a strong dependence of defect-induced emissions on both dopant content and synthesis methods. The physical origin of all the sub-bands could be clarified, and related to sample composition and synthesis protocol.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP00746E

Reference54 articles.

1. The growth of transparent conducting ZnO films by pulsed laser ablation

2. Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy

3. Effect of different dopant elements on the properties of ZnO thin films

4. Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

5. Gallium doping in transparent conductive ZnO thin films prepared by chemical spray pyrolysis

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