Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE
Author:
Affiliation:
1. Central Lab of Solar Energy and New Energy Sources at the Bulg. Acad. Sci.
2. Sofia, Bulgaria
3. Leibniz Institute for Crystal Growth
4. 12 489 Berlin, Germany
Abstract
For the first time, n-type homoepitaxial semiconducting β-Ga2O3 layers were attained by MOVPE.
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/CE/C5CE01106J
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