High-sensitivity CdTe phototransistors with the response spectrum extended to 1.65 μm-Reference-Cited by-同舟云学术

High-sensitivity CdTe phototransistors with the response spectrum extended to 1.65 μm

Published:2022 Issue:39 Volume:10 Page:20837-20846
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Zhang Jiyue¹,Cao Hechun¹,Bai Wei¹^ORCID,Zhao Dongyang¹,Chen Yan¹²^ORCID,Wang Xudong³,Yang Jing¹,Zhang Yuanyuan¹^ORCID,Qi Ruijuan¹,Huang Rong¹,Tang Xiaodong¹⁴,Wang Jianlu³²⁵,Chu Junhao³²

Affiliation:

1. Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai 200241, P.R. China

2. Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai 200433, China

3. National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P.R. China

4. Collaborative Innovation, Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, P.R. China

5. Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Hangzhou 330106, China

Abstract

We reported the spectral extension to 1.65 μm far beyond the λcutoff of 870 nm. Ultrahigh R and D* above 3.84 A W−1 and 3.73 × 1011 Jones, respectively, are realized, illustrating strong competitiveness with Si, Ge and InGaAs commercial detectors.

Funder

Science and Technology Commission of Shanghai Municipality

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TA/D2TA04119G

Reference52 articles.

1. CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications