Lead monoxide: a two-dimensional ferromagnetic semiconductor induced by hole-doping-Reference-Cited by-同舟云学术

Lead monoxide: a two-dimensional ferromagnetic semiconductor induced by hole-doping

Published:2017 Issue:18 Volume:5 Page:4520-4525
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Yao¹²³⁴⁵,Zhang Qingyun⁶⁷⁸⁹,Shen Qian¹²³⁴⁵,Cheng Yingchun¹²³⁴⁵^ORCID,Schwingenschlögl Udo⁶⁷⁸⁹^ORCID,Huang Wei¹²³⁴⁵

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM)

2. Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)

3. Nanjing Tech University (NanjingTech)

4. Nanjing 211816

5. China

6. Physical Science and Engineering Division (PSE)

7. King Abdullah University of Science and Technology (KAUST)

8. Thuwal 23955-6900

9. Saudi Arabia

Abstract

We employ first-principles calculations to demonstrate ferromagnetic ground states for single- and multi-layer lead monoxide (PbO) under hole-doping, originating from a van Hove singularity at the valence band edge.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00299H

Reference45 articles.

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