Soft landing of polyatomic anions onto three-dimensional semiconductive and conductive substrates-Reference-Cited by-同舟云学术

Soft landing of polyatomic anions onto three-dimensional semiconductive and conductive substrates

Published:2023 Issue:6 Volume:5 Page:1672-1680
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Gholipour-Ranjbar Habib¹^ORCID,Hu Hang¹^ORCID,Su Pei¹,Samayoa Oviedo Hugo Yuset¹,Gilpin Christopher²,Wang Haomin³,Zhang Yingying³,Laskin Julia¹^ORCID

Affiliation:

1. Department of Chemistry, Purdue University, West Lafayette, IN, 47906, USA

2. Life Science Microscopy Facility, Purdue University, West Lafayette, IN, 47907, USA

3. Department of Chemistry, Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Tsinghua University, Beijing 100084, China

Abstract

Anion penetration into the semiconducting vertically aligned TiO2 nanotubes and conductive vertically aligned carbon nanotubes is examined using soft landing of well-characterized polyoxometalate anions.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D2NA00632D

Reference52 articles.

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4. Rational design of efficient electrode–electrolyte interfaces for solid-state energy storage using ion soft landing

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