Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

Author:

Wang Weihua1ORCID,Dai Bing12,Shu Guoyang1,Wang Yang1,Fang Shishu1,Yang Shilin1,Liu Xuedong1,Liu Benjian1,Xue Ruibin1,Zhao Jiwen1,Liu Kang1,Yang Lei3,Han Jiecai1,Zhu Jiaqi14ORCID

Affiliation:

1. National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology, Harbin 150001, China

2. HRG Institute(Zhongshan) of Unmanned Equipment & AI, Zhongshan 528521, China

3. Center for Analysis and Measurement, Harbin Institute of Technology, Harbin 150001, China

4. Key Laboratory of Micro-systems and Micro-structures Manufacturing Ministry of Education, Harbin Institute of Technology, Harbin 150001, China

Abstract

A competition between diamond nucleation and growth is proposed in which the surface and bulk nucleation coexist and compete.

Funder

China National Funds for Distinguished Young Scientists

National Natural Science Foundation of China

National Key Research and Development Program of China

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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