Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition-Reference-Cited by-同舟云学术

Competition between diamond nucleation and growth under bias voltage by microwave plasma chemical vapor deposition

Published:2021 Issue:44 Volume:23 Page:7731-7738
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Wang Weihua¹^ORCID,Dai Bing¹²,Shu Guoyang¹,Wang Yang¹,Fang Shishu¹,Yang Shilin¹,Liu Xuedong¹,Liu Benjian¹,Xue Ruibin¹,Zhao Jiwen¹,Liu Kang¹,Yang Lei³,Han Jiecai¹,Zhu Jiaqi¹⁴^ORCID

Affiliation:

1. National Key Laboratory of Special Environment Composite Technology, Harbin Institute of Technology, Harbin 150001, China

2. HRG Institute(Zhongshan) of Unmanned Equipment & AI, Zhongshan 528521, China

3. Center for Analysis and Measurement, Harbin Institute of Technology, Harbin 150001, China

4. Key Laboratory of Micro-systems and Micro-structures Manufacturing Ministry of Education, Harbin Institute of Technology, Harbin 150001, China

Abstract

A competition between diamond nucleation and growth is proposed in which the surface and bulk nucleation coexist and compete.

Funder

China National Funds for Distinguished Young Scientists

National Natural Science Foundation of China

National Key Research and Development Program of China

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00865J

Reference32 articles.

1. Epitaxial diamond on Ir/ SrTiO3/Si (001): From sequential material characterizations to fabrication of lateral Schottky diodes

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