Defect engineering in semiconductor-based SERS-Reference-Cited by-同舟云学术

Defect engineering in semiconductor-based SERS

Published:2022 Issue:5 Volume:13 Page:1210-1224
ISSN:2041-6520
Container-title:Chemical Science
language:en
Short-container-title:Chem. Sci.

Author:

Song Ge¹²,Cong Shan¹³⁴^ORCID,Zhao Zhigang¹²³^ORCID

Affiliation:

1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

2. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

3. Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Chinese Academy of Sciences (CAS), Suzhou 215123, China

4. Gusu Laboratory of Materials, Suzhou 215123, China

Abstract

Defect engineering strategies are used to boost the SERS activity of a wide variety of semiconductors including metal oxides, nitrides, carbon materials and transition metal dichalcogenides (TMDs), as discussed in this perspective.

Funder

National Natural Science Foundation of China

Six Talent Peaks Project in Jiangsu Province

Youth Innovation Promotion Association

National Key Research and Development Program of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/SC/D1SC05940H

Reference132 articles.

1. A mesopore-stimulated electromagnetic near-field: electrochemical synthesis of mesoporous copper films by micelle self-assembly

2. Self-assembling of metallic Rh over DNA as nano-chains: An effective organosol for catalysis and SERS studies

3. Periodic Porous Alloyed Au–Ag Nanosphere Arrays and Their Highly Sensitive SERS Performance with Good Reproducibility and High Density of Hotspots

4. Mesoporous Au films assembled on flexible cellulose nanopaper as high-performance SERS substrates

5. Controllable preparation of Au-MoS2 nano-array composite: optical properties study and SERS application

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