Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity-Reference-Cited by-同舟云学术

Solar-blind photodetector based on Ga2O3 nanowires array film growth from inserted Al2O3 ultrathin interlayers for improving responsivity

Published:2016 Issue:103 Volume:6 Page:100683-100689
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Cui Wei¹²³⁴⁵,Guo Daoyou¹²³⁴⁵,Zhao Xiaolong¹²³⁴⁵,Wu Zhenping¹²³⁴⁵,Li Peigang¹²³⁴⁵,Li Linghong⁶⁷⁸⁹,Cui Can¹⁰⁶¹¹¹²⁵,Tang Weihua¹²³⁴⁵

Affiliation:

1. Laboratory of Optoelectronics Materials and Devices

2. School of Science

3. Beijing University of Posts and Telecommunications

4. Beijing 100876

5. China

6. Department of Physics

7. The State University of New York at Potsdam

8. New York 13676-2294

9. USA

10. Center for Optoelectronics Materials and Devices

11. Zhejiang Sci-Tech University

12. HangZhou

Abstract

We propose a method to obtain Ga₂O₃ nanowire films which combines the benefits of nanowires and thin films by alternative deposition of Ga₂O₃ and Al₂O₃ ultrathin layers. The nanowire film-based photodetectors exhibit much higher responsivities than smooth film-based ones.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA16108A

Reference37 articles.

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5. Avalanche multiplication in AlGaN based solar-blind photodetectors

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