Electrostatic gating-driven transition from Schottky contact to p–n junction in moiré patterned Ars/Gra heterostructures-Reference-Cited by-同舟云学术

Electrostatic gating-driven transition from Schottky contact to p–n junction in moiré patterned Ars/Gra heterostructures

Published:2023 Issue:44 Volume:11 Page:15454-15462
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhao Chunxiang¹,Zhang Shuai²,Niu Chunyao³,Wang Fei³^ORCID,Cui Bin⁴^ORCID,Li Chong³^ORCID,Jia Yu³

Affiliation:

1. College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang 473061, China

2. School of Physics and Engineering, Henan University of Science and Technology, Luoyang, 471023, China

3. School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China

4. School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Abstract

Using first-principles calculations, the Moiré patterned Ars/Gra heterostructure is identified to transition from Schottky contact to p–n junction by electrostatic gating. Carrier transport also supports the finding of such electric phase transition.

Funder

Henan Provincial Science and Technology Research Project

Key Scientific Research Project of Colleges and Universities in Henan Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC02467A

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