Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO<sub>2</sub> ferroelectric junctionless TFET biosensors-Reference-Cited by-同舟云学术

Reliability and sensitivity analysis of double inverted-T nano-cavity label-free Si:HfO₂ ferroelectric junctionless TFET biosensors

Published:2022 Issue:42 Volume:12 Page:27179-27188
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Singh Sangeeta¹,Singh Shradhya¹,Mohammed Mustafa K. A.²^ORCID,Kishor Jha Kamal³,Loan Sajad A.⁴

Affiliation:

1. Microelectronics & VLSI Lab, National Institute of Technology, Patna-800005, India

2. Department of Medical Physics, Al-Mustaqbal University College, 51001 Hillah, Babylon, Iraq

3. Indian Institute of Information Technology Vadodara, India

4. Jamia Millia Islamia, New Delhi, India

Abstract

We propose and simulate an ultrasensitive, label-free, and charge/dielectric modulated Si:HfO2 ferroelectric junctionless tunnel field effect transistor (FE-JL-TFET) based biosensor.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA03118C

Reference46 articles.

1. Gate-all-around junctionless FET based label-free dielectric/charge modulation detection of SARS-CoV-2 virus

2. Glossary of terms related to pharmaceutics (IUPAC Recommendations 2009)

3. Combating Actions of Green 2D-Materials on Gram Positive and Negative Bacteria and Enveloped Viruses

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