Highly efficient and stable quantum dot light-emitting devices with a low-temperature tin oxide electron transport layer-Reference-Cited by-同舟云学术

Highly efficient and stable quantum dot light-emitting devices with a low-temperature tin oxide electron transport layer

Published:2021 Issue:39 Volume:9 Page:13748-13754
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Feng Haiwei¹,Liu Shihao¹^ORCID,Tang Ge¹,Zhang Letian¹^ORCID,Xie Wenfa¹^ORCID

Affiliation:

1. State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, People's Republic of China

Abstract

UVO treatment is proposed to decompose the residual tin hydroxide in an SnO2 ETL film. With UVO treatment, efficient and stable QLEDs are fabricated with a low-temperature SnO2 transport layer.

Funder

National Natural Science Foundation of China

Department of Science and Technology of Jilin Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03073F

Reference30 articles.

1. Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer

2. Electroluminescence from single monolayers of nanocrystals in molecular organic devices