Vacancy-induced thermal transport in two-dimensional silicon carbide: a reverse non-equilibrium molecular dynamics study-Reference-Cited by-同舟云学术

Vacancy-induced thermal transport in two-dimensional silicon carbide: a reverse non-equilibrium molecular dynamics study

Published:2020 Issue:24 Volume:22 Page:13592-13602
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Islam A. S. M. Jannatul¹²³⁴^ORCID,Islam Md. Sherajul¹²³⁴^ORCID,Ferdous Naim¹²³⁴^ORCID,Park Jeongwon⁵⁶⁷⁸⁹^ORCID,Hashimoto Akihiro¹⁰¹¹¹²¹³

Affiliation:

1. Department of Electrical and Electronic Engineering

2. Khulna University of Engineering & Technology

3. Khulna 9203

4. Bangladesh

5. Department of Electrical and Biomedical Engineering

6. University of Nevada

7. Reno

8. USA

9. School of Electrical Engineering and Computer Science

10. Graduate School of Engineering

11. University of Fukui

12. Fukui 910-8507

13. Japan

Abstract

We explored the effect of vacancies (bi vacancy, point vacancy, and mixed vacancy) on the phonon thermal transport behavior of 2D-SiC using RNEMD simulations.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/D0CP00990C

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