Nanoscale phase separation in the oxide layer at GeTe (111) surfaces-Reference-Cited by-同舟云学术

Nanoscale phase separation in the oxide layer at GeTe (111) surfaces

Published:2022 Issue:35 Volume:14 Page:12918-12927
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Frolov Alexander S.¹²^ORCID,Callaert Carolien³,Batuk Maria³^ORCID,Hadermann Joke³^ORCID,Volykhov Andrey A.¹⁴,Sirotina Anna P.²⁵,Amati Matteo⁶,Gregoratti Luca⁶,Yashina Lada V.¹²^ORCID

Affiliation:

1. Department of Chemistry, Lomonosov Moscow State University, Leninskie Gory 1/3, 119991 Moscow, Russia

2. N.N. Semenov Federal Research Center for Chemical Physics, Kosygina Street 4, 119991 Moscow, Russia

3. EMAT, Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp, Belgium

4. Institute of General and Inorganic Chemistry RAS, Leninsky Avenue 31, 119991 Moscow, Russia

5. Institute of Nanotechnology of Microelectronics RAS, Nagatinskaya str., 16A/11, 115487 Moscow, Russia

6. Elettra - Sincrotrone Trieste S.C.p.A., Area Science Park, I-34012 Basovizza, Trieste, Italy

Abstract

As a semiconductor ferroelectric, GeTe has become a focus of renewed attention due to the recent discovery of giant Rashba splitting. For the future applications, the knowledge of growth kinetics and structure of oxide layer is of great importance.

Funder

Deutscher Akademischer Austauschdienst

Bijzonder Onderzoeksfonds

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR02261C

Reference48 articles.

1. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory

2. Low-Symmetry Rhombohedral GeTe Thermoelectrics

3. Electric Control of the Giant Rashba Effect in Bulk GeTe

4. Semiconductor materials for thermoelectric power generation up to 700 C

5. GeTe Thermoelectrics