Effective fluorination of single-layer graphene by high-energy ion irradiation through a LiF overlayer

Author:

Entani Shiro1234,Mizuguchi Masaki5674,Watanabe Hideo89104,Antipina Liubov Yu.1112131413,Sorokin Pavel B.1112131413,Avramov Pavel V.151617,Naramoto Hiroshi1234,Sakai Seiji1234

Affiliation:

1. Quantum Beam Science Directorate

2. National Institutes for Quantum and Radiological Science and Technology

3. Tokai

4. Japan

5. Institute for Materials Research

6. Tohoku University

7. Sendai 980-8577

8. Research Institute for Applied Mechanics

9. Kyushu University

10. Kasuga

11. Technological Institute for Superhard and Novel Carbon Materials

12. Troitsk

13. Russian Federation

14. National University of Science and Technology MISiS

15. Kyungpook National University

16. Daegu 702-701

17. Republic of Korea

Abstract

A new non-chemical method for heteroatom doping into single-layer graphene was demonstrated by high-energy ion irradiation of the graphene-based heterostructure.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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