Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X = Br, I) monolayers-Reference-Cited by-同舟云学术

Large tunneling magnetoresistance in magnetic tunneling junctions based on two-dimensional CrX3 (X = Br, I) monolayers

Published:2018 Issue:47 Volume:10 Page:22196-22202
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Pan Longfei¹²³⁴⁵,Huang Le⁶⁷⁸⁹^ORCID,Zhong Mianzeng¹²³⁴⁵^ORCID,Jiang Xiang-Wei¹²³⁴⁵,Deng Hui-Xiong¹²³⁴⁵,Li Jingbo¹²³⁴⁵,Xia Jian-Bai¹²³⁴⁵,Wei Zhongming¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Superlattices and Microstructures

2. Institute of Semiconductors

3. Chinese Academy of Sciences & College of Materials Science and Opto-Electronic Technology

4. University of Chinese Academy of Sciences

5. Beijing 100083

6. School of Materials and Energy

7. Guangdong University of Technology

8. Guangzhou

9. China

Abstract

The large tunneling magnetoresistance (TMR) effect was observed in magnetic tunneling junctions (MTJs), which have atomic thickness because of the use of two-dimensional ferromagnetic CrX₃ (X = Br, I) monolayers.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR06255B

Reference45 articles.

1. Spin-torque diode effect in magnetic tunnel junctions

2. Microwave oscillations of a nanomagnet driven by a spin-polarized current