Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors-Reference-Cited by-同舟云学术

Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors

Published:2016 Issue:9 Volume:7 Page:5753-5757
ISSN:2041-6520
Container-title:Chemical Science
language:en
Short-container-title:Chem. Sci.

Author:

Dai Ya-Zhong¹²³⁴⁵,Ai Na¹²³⁴⁵,Lu Yang¹²³⁴⁵,Zheng Yu-Qing¹²³⁴⁵,Dou Jin-Hu¹²³⁴⁵,Shi Ke¹²³⁴⁵,Lei Ting¹²³⁴⁵,Wang Jie-Yu¹²³⁴⁵,Pei Jian¹²³⁴⁵

Affiliation:

1. Beijing National Laboratory for Molecular Sciences

2. Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education

3. Key Laboratory of Polymer Chemistry and Physics of Ministry of Education

4. Center for Soft Matter Science and Engineering

5. College of Chemistry and Molecular Engineering

Abstract

The low LUMO level and the conformation-locked planar backbone provide polymer AzaBDOPV-2T with electron mobilities over 3.22 cm² V⁻¹ s⁻¹ tested in air.

Funder

Ministry of Science and Technology

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/SC/C6SC01380E

Reference40 articles.

1. Semiconducting polymers: the Third Generation

2. Integrated Materials Design of Organic Semiconductors for Field-Effect Transistors

3. Semiconducting π-Conjugated Systems in Field-Effect Transistors: A Material Odyssey of Organic Electronics

4. Organic Field-Effect Transistors based on Highly Ordered Single Polymer Fibers

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