Growth mechanisms of monolayer hexagonal boron nitride (<i>h</i>-BN) on metal surfaces: theoretical perspectives-Reference-Cited by-同舟云学术

Growth mechanisms of monolayer hexagonal boron nitride (h-BN) on metal surfaces: theoretical perspectives

Published:2023 Issue:16 Volume:5 Page:4041-4064
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Islam Md. Sherajul¹²^ORCID,Mazumder Abdullah Al Mamun³^ORCID,Sohag Minhaz Uddin¹,Sarkar Md. Mosarof Hossain¹,Stampfl Catherine⁴^ORCID,Park Jeongwon²⁵^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, Khulna 9203, Bangladesh

2. Department of Electrical and Biomedical Engineering, University of Nevada, Reno, NV 89557, USA

3. Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

4. School of Physics, The University of Sydney, New South Wales 2006, Australia

5. School of Electrical Engineering and Computer Science, University of Ottawa, Ottawa, ON K1N 6N5, Canada

Abstract

The atomic-scale growth mechanisms, which are prerequisites for rationally optimizing growth circumstances, of recent cutting-edge theoretical research on two dimensional h-BN on different metal substrates have been summarized.

Funder

Office of Experimental Program to Stimulate Competitive Research

Nevada Space Grant Consortium

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D3NA00382E

Reference335 articles.

1. Large-scale synthesis of graphene and other 2D materials towards industrialization

2. 2D materials for future heterogeneous electronics