AuGe surface plasmon enhances photoluminescence of the InAs/GaAs bilayer quantum dot heterostructure-Reference-Cited by-同舟云学术

AuGe surface plasmon enhances photoluminescence of the InAs/GaAs bilayer quantum dot heterostructure

Published:2016 Issue:32 Volume:6 Page:26908-26913
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Pandey Sushil Kumar¹²³⁴,Tyagi Lavi⁵²³⁴,Shete Pranav¹²³⁴,Ghadi Hemant¹²³⁴,Rawool Harshal¹²³⁴,Murkute Poonam⁵²³⁴,Chakrabarti Subhananda¹²³⁴

Affiliation:

1. Department of Electrical Engineering

2. Indian Institute of Technology Bombay

3. Mumbai 400076

4. India

5. Center for Research in Nanotechnology and Science

Abstract

We report an improvement in the photoluminescence of a GaAs-capped InAs/GaAs bilayer quantum dot (QD) heterostructure by AuGe nanoparticle deposition on the surface of a thin capped layer.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA27980A

Reference34 articles.

1. Self-assembled InAs-GaAs quantum-dot intersubband detectors

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3. 1.3 μm room-temperature GaAs-based quantum-dot laser

4. 3.5 W CW operation of quantum dot laser

5. Strain-interactions between InAs/GaAs quantum dot layers

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