Crystallization behaviors of ZnxSb100−x thin films for ultralong data retention phase change memory applications-Reference-Cited by-同舟云学术

Crystallization behaviors of ZnxSb100−x thin films for ultralong data retention phase change memory applications

Published:2014 Issue:5 Volume:16 Page:757-762
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Chen Yimin¹²³⁴,Wang Guoxiang¹²³⁴,Shen Xiang¹²³⁴,Xu Tiefeng¹²³⁴,Wang R. P.⁵⁶⁷,Wu Liangcai⁸⁹¹⁰,Lu Yegang¹²³⁴,Li Junjian¹²³⁴,Dai Shixun¹²³⁴,Nie Qiuhua¹²³⁴

Affiliation:

1. Laboratory of Infrared Material and Devices

2. Advanced Technology Research Institute

3. Ningbo University

4. Ningbo 315211, China

5. Laser Physics Centre

6. Australian National University

7. Canberra, Australia

8. Shanghai Institute of Micro-system and Information Technology

9. Chinese Academy of Sciences

10. Shanghai 200050, China

Abstract

ZnSb films have higher crystallization temperature (~257 °C), larger crystalline activation energy (~5.63 eV), better 10 year-data-retention (~201 °C) and lower melting temperature (~500 °C).

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C3CE42024H

Reference23 articles.

1. Who Wins the Nonvolatile Memory Race?

2. Towards a universal memory?

3. Phase-change materials for rewriteable data storage

4. SiO2doped Ge2Sb2Te5thin films with high thermal efficiency for applications in phase change random access memory

5. Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tailoring structure by the Zn-induced tetrahedron to enable high-stability and low-transition-energy of Sb2Te phase-change films;Materials Chemistry and Physics;2024-03

2. Superlattice-like films with high thermal stability and ultralow power consumption via adding graphite carbon nanolayers;Applied Physics Letters;2023-12-18

3. Nanoarchitectonics of binary semiconductor Sb–Y for the application of phase-change memory device;Applied Physics A;2023-10-14

4. Monatomic Sb thin films alloyed with Sb2S3 enables superior thermal stability and resistance drift by spontaneous self-decomposition;Ceramics International;2023-06

5. GeTe ultrathin film based phase-change memory with extreme thermal stability, fast SET speed, and low RESET power energy;AIP Advances;2023-03-01