GexSi1−x virtual-layer enhanced ferromagnetism in self-assembled Mn0.06Ge0.94 quantum dots grown on Si wafers by molecular beam epitaxy-Reference-Cited by-同舟云学术

GexSi1−x virtual-layer enhanced ferromagnetism in self-assembled Mn0.06Ge0.94 quantum dots grown on Si wafers by molecular beam epitaxy

Author:

Wang Liming¹²³⁴⁵^ORCID,Zhang Yichi¹²³⁴⁵,Liu Tao⁶⁷⁸⁹¹⁰,Zhang Zhi¹¹¹²¹³¹⁴,Hu Huiyong¹²³⁴⁵,Zou Jin¹¹¹²¹³¹⁴^ORCID,Jia Quanjie¹⁵¹⁶¹⁷⁵,Jiang Zuimin⁶⁷⁸⁹¹⁰

Affiliation:

1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology

2. School of Microelectronics

3. Xidian University

4. Xi'an 710071

5. China

6. State Key Laboratory of Surface Physics

7. Department of Physics

8. and Collaborative Innovation Center of Advanced Microstructures

9. Fudan University

10. Shanghai 200433

11. Materials Engineering and Centre for Microscopy and Microanalysis

12. The University of Queensland

13. QLD 4072

14. Australia

15. Beijing Synchrotron Radiation Facility

16. Institute of High Energy Physics

17. Beijing 100039

Abstract

The ferromagnetism of MnGe QDs grown on GeSi VS will markedly increase by increasing the Ge composition of GeSi VS.

Funder

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference44 articles.

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