Site occupations of Zn in AgInSe2-based chalcopyrites responsible for modified structures and significantly improved thermoelectric performance-Reference-Cited by-同舟云学术

Site occupations of Zn in AgInSe2-based chalcopyrites responsible for modified structures and significantly improved thermoelectric performance

Published:2014 Issue:64 Volume:4 Page:33897-33904
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Wang Li¹²³,Ying Pengzhan¹²³,Deng Yuan⁴⁵⁶,Zhou Hong¹²³,Du Zhengliang⁷⁸⁹¹⁰,Cui Jiaolin⁷⁸⁹¹⁰

Affiliation:

1. Materials Science and Engineering College

2. China University of Mining and Technology

3. Xuzhou 221116, China

4. Beijing Key Laboratory of Special Functional Materials and Films, School of Materials Science and Engineering

5. Beihang University

6. Beijing 100191, China

7. Institute of Materials Engineering

8. School of Materials

9. Ningbo University of Technology

10. Ningbo 315016, China

Abstract

Site occupations of Zn in AgInSe₂-based chalcopyrites, which leads to the formation of the defects Zn_Ag¹⁺ and Zn_In¹⁻, are directly responsible for modified structures and significantly improved thermoelectric performance.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA03054K

Reference39 articles.

1. Enhancement of Thermoelectric Efficiency in PbTe by Distortion of the Electronic Density of States

2. Periodic heating amplifies the efficiency of thermoelectric energy conversion

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4. Convergence of electronic bands for high performance bulk thermoelectrics

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