Enhancing photoluminescence properties of SiC/SiO2 coaxial nanocables by making oxygen vacancies
Author:
Affiliation:
1. State Key Laboratory of Advanced Metallurgy
2. University of Science and Technology Beijing
3. Beijing 100083
4. China
5. School of materials engineering
Abstract
Enhanced photoluminescence properties of SiC/SiO2 coaxial nanocables by making oxygen vacancies.
Publisher
Royal Society of Chemistry (RSC)
Subject
Inorganic Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/DT/C6DT02049F
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