Effects of line defects on the electronic and optical properties of strain-engineered WO3 thin films
Author:
Affiliation:
1. Beijing National Laboratory for Condensed Matter Physics
2. Institute of Physics
3. Chinese Academy of Sciences
4. Beijing 100190
5. China
Abstract
We report the discovery of a new line defect, and the modification of electronic structures in strain engineered WO3 films.
Funder
National Natural Science Foundation of China
Chinese Academy of Sciences
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC03896H
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