YSZ thin films with minimized grain boundary resistivity-Reference-Cited by-同舟云学术

YSZ thin films with minimized grain boundary resistivity

Published:2016 Issue:15 Volume:18 Page:10486-10491
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Mills Edmund M.¹²³⁴,Kleine-Boymann Matthias⁵⁶⁷⁸,Janek Juergen⁵⁶⁷⁸,Yang Hao⁹¹⁰⁴,Browning Nigel D.⁹¹⁰⁴,Takamura Yayoi¹²³⁴,Kim Sangtae¹²³⁴

Affiliation:

1. University of California Davis

2. Department of Chemical Engineering and Materials Science

3. Davis California 95616

4. USA

5. Justus-Liebig-Universität Gießen

6. Physikalisch-Chemisches Institut

7. 35392 Gießen

8. Germany

9. Pacific Northwest National Laboratory

10. Richland

Abstract

The grain boundary resistance of nano-columnar yttria-stabilized zirconia thin films is almost completely eliminated near the film–substrate interface through substrate induced magnesium doping.

Funder

United States - Israel Binational Science Foundation

Laboratory Directed Research and Development

Division of Materials Research

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C5CP08032K

Reference22 articles.

1. Lowering the Temperature of Solid Oxide Fuel Cells

2. Oxygen tracer diffusion along interfaces of strained Y2O3/YSZ multilayers

3. Ionic conductivity in oxide heterostructures: the role of interfaces

4. Solid oxide fuel cell (SOFC) technical challenges and solutions from nano-aspects

5. Grain Boundary Blocking Effect in Zirconia: A Schottky Barrier Analysis

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