Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior-Reference-Cited by-同舟云学术

Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior

Author:

Yoo Sijung¹²³⁴⁵,Yoo Chanyoung¹²³⁴⁵,Park Eui-Sang¹²³⁴⁵,Kim Woohyun¹²³⁴⁵,Lee Yoon Kyeung¹²³⁴⁵,Hwang Cheol Seong¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. Inter-University Semiconductor Research Center

3. Seoul National University

4. Seoul 08826

5. Republic of Korea

Abstract

Ge–Sb–Se–Te quaternary films were prepared through atomic layer deposition (ALD) for ovonic threshold switching (OTS) applications.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference25 articles.

3. Y. Koo , K.Baek and H.Hwang , 2016 IEEE Symposium on VLSI Technology , IEEE, 2016, pp. 1–2

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