Ruthenium complexes as precursors for chemical vapor-deposition (CVD)
Author:
Affiliation:
1. Department of Chemistry
2. Faculty of Science
3. Banaras Hindu University
4. Varanasi-221005, India
5. Thermodynamics
6. IVG
7. Faculty of Engineering, and CeNIDE
8. University of Duisburg Essen
9. 47057 Duisburg, Germany
Abstract
The progress in precursor chemistry for the chemical vapor deposition of ruthenium containing thin films is reviewed.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA04701J
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5. Ruthenium surface compounds supported on silica gel I. Preparation and catalytic properties
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