Room temperature magnetoresistance effects in ferroelectric poly(vinylidene fluoride) spin valves-Reference-Cited by-同舟云学术

Room temperature magnetoresistance effects in ferroelectric poly(vinylidene fluoride) spin valves

Published:2017 Issue:21 Volume:5 Page:5055-5062
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Xianmin¹²³⁴⁵^ORCID,Tong Junwei¹²³⁴⁵,Zhu Huie⁶⁷⁸⁹,Wang Zhongchang¹⁰¹¹⁷⁸⁹,Zhou Lianqun¹²¹³¹⁴¹⁵⁵,Wang Shouguo¹⁶¹⁷¹⁸⁵,Miyashita Tokuji⁶⁷⁸⁹,Mitsuishi Masaya⁶⁷⁸⁹,Qin Gaowu¹²³⁴⁵

Affiliation:

1. Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education)

2. School of Material Science and Engineering

3. Northeastern University

4. Shenyang 110819

5. China

6. Institute of Multidisciplinary Research for Advanced Materials

7. Tohoku University

8. Sendai 980-8577

9. Japan

10. World Premier International Research Center

11. Advanced Institute for Materials Research

12. Suzhou Institute of Biomedical

13. Engineering and Technology

14. Chinese Academy of Sciences

15. Suzhou 215163

16. Department of Materials Physics and Chemistry

17. University of Science and Technology Beijing

18. Beijing 100083

Abstract

Room temperature magnetoresistance devices using ferroelectric poly(vinylidene fluoride) as the spacer layer were successfully fabricated for the first time.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC00517B

Reference73 articles.

1. Room temperature spin polarized injection in organic semiconductor

2. Giant magnetoresistance in organic spin-valves

3. Transformation of spin information into large electrical signals using carbon nanotubes