Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure-Reference-Cited by-同舟云学术

Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure

Published:2018 Issue:26 Volume:10 Page:12322-12329
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Duong Ngoc Thanh¹²³⁴⁵,Bang Seungho¹²³⁴⁵,Lee Seung Mi⁶⁷⁴,Dang Dang Xuan¹²³⁴⁵,Kuem Dong Hoon⁵⁸³⁴,Lee Juchan¹²³⁴,Jeong Mun Seok¹²³⁴⁵^ORCID,Lim Seong Chu¹²³⁴⁵^ORCID

Affiliation:

1. Department of Energy Science

2. Sungkyunkwan University (SKKU)

3. Suwon 16419

4. Republic of Korea

5. Center for Integrated Nanostructure Physics

6. Korea Research Institute of Standards and Science (KRISS)

7. Daejeon 34113

8. Institute for Basic Science (IBS)

Abstract

The parameters of the MoS₂/MoTe₂ van der Waals tunnel diode are optimized to obtain a peak-to-valley current ratio of 4.8.

Funder

Institute for Basic Science

Ministry of Science, ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR01711E

Reference54 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Atomically thin p–n junctions with van der Waals heterointerfaces

3. Van der Waals heterostructures

4. Electric Field Effect in Atomically Thin Carbon Films

5. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

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